Deformation of thin films of semimetals by dome bending of the substrate

The results of a study of the semimetal films deformation produced by dome bending of the substrate are presented. Deformation control was carried out by means of X-ray diffraction analysis. It is shown that the dome bending method can be used to study films under planar deformation in a film-substrate system with different thermal expansion coefficients. The maximum in-plane deformation for bismuth films of 1 mkm thickness order was found. It was shown that the deformation created by the dome bending of the substrate in combination with the use of substrates with different temperature expansion makes it possible to obtain a relative in-plane deformation of bismuth films up to 0.8% at 300 K.