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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2022 Volume 56, Issue 3, Pages 335–339 (Mi phts7019)

This article is cited in 1 paper

Surface, interfaces, thin films

Low-temperature photoluminescence of WSe$_2$ monolayer obtained by gold-assisted exfoliation

S. N. Nikolaev, V. S. Bagaev, M. A. Chernopitskii, I. I. Usmanov, E. E. Onishchenko, A. A. Deeva, V. S. Krivobok

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia

Abstract: We studied the optical properties of an atomically thin WSe$_2$ film obtained by gold-assisted mechanical exfoliation. Raman scattering spectra, low-temperature photoluminescence, and micro-reflection from large-scale monolayer are investigated. At room temperature, the optical properties of such a film reproduce the properties of WSe$_2$ monolayers obtained by regular mechanical exfoliation. It is shown that at low temperatures, the radiation spectra of the resulting film are determined by standard mechanisms of radiative recombination involving free excitons, bound excitons, and trions. However, in contrast to room temperatures, there is a significant difference in the spectral width and intensity of the lines compared to monolayers WSe$_2$, obtained regular way from the same source material. The differences found, demonstrating a significant increase in background doping and structural disorder when using gold-assisted exfoliation, may be meaningful for a number of optoelectronic applications of atomically thin WSe$_2$ films.

Keywords: layered semiconductors, luminescence, monolayer, escitons.

Received: 16.11.2021
Revised: 20.11.2021
Accepted: 20.11.2021

DOI: 10.21883/FTP.2022.03.52120.9772



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