L. S. Basalaeva, A. V. Tsarev, K. V. Anikin, S. L. Veber, N. V. Kryzhanovskaya, Yu. V. Nastaushev, “Optical properties of silicon nanopillars with a built-in vertical $p$–$n$-junction”, Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 3,Pages 340

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical properties of silicon nanopillars with a built-in vertical $p$–$n$-junction

L. S. Basalaeva^a, A. V. Tsarev^ab, K. V. Anikin^a, S. L. Veber^bc, N. V. Kryzhanovskaya^d, Yu. V. Nastaushev^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State University, 630090 Novosibirsk, Russia
^c International Tomography Center of the Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
^d Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch.

Keywords: silicon nanopillars, structural colors, all-dielectric nanophotonics.

Received: 10.11.2021
Revised: 20.11.2021
Accepted: 20.11.2021

DOI: 10.21883/FTP.2022.03.52121.9761