I. V. Bondar', V. A. Yashchuk, V. N. Pavlovskii, G. P. Yablonskii, “Growth, crystal structure and temperature dependence of the band gap of Cu$_2$ZnGeS$_4$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 5,Pages 498

Micro- and nanocrystalline, porous, composite semiconductors

Growth, crystal structure and temperature dependence of the band gap of Cu$_2$ZnGeS$_4$ single crystals

I. V. Bondar'^a, V. A. Yashchuk^a, V. N. Pavlovskii^b, G. P. Yablonskii^b

^a Belarussian State University of Computer Science and Radioelectronic Engineering, 220013 Minsk, Belarus
^b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 220072 Minsk, Belarus

Abstract: Cu$_2$ZnGeS$_4$ single crystals were grown by chemical vapor transport reaction method. Their composition and crystal structure were determined. It was shown that the obtained single crystals crystallize in a tetragonal structure. The band gap of the obtained single crystals was determined basing on transmission spectrum in the region of the absorption edge in temperature range of 10–320 K. It was found that band gap width increases with decreasing of temperature.

Keywords: Bridgman method, single crystals, crystal structure, transmission spectrum, band gap.

Received: 29.12.2021
Revised: 19.01.2022
Accepted: 19.01.2022

DOI: 10.21883/FTP.2022.05.52353.9801