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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive
Fizika i Tekhnika Poluprovodnikov, 2022 Volume 56, Issue 6, Pages 547–552 (Mi phts7057)
Surface, interfaces, thin films

Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon

P. V. Seredinab, Ali Obaid Radama, D. L. Goloshchapova, A. S. Len'shinac, N. S. Builova, K. A. Barkova, D. N. Nesterova, A. M. Mizerovd, S. N. Timoshnevd, E. V. Nikitinad, I. N. Arsent'eve, Sh. Sharofidinove, L. S. Vavilovae, S. A. Kukushkinf, I. A. Kasatking

a Voronezh State University
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Voronezh State University of Engineering Technologies
d Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
e Ioffe Institute, St. Petersburg
f Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
g Saint Petersburg State University

Abstract: We carried out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.

Received: 15.02.2022
Revised: 21.02.2022
Accepted: 21.02.2022

DOI: 10.21883/FTP.2022.06.52587.9816



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