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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2022 Volume 56, Issue 6, Pages 576–579 (Mi phts7062)

Micro- and nanocrystalline, porous, composite semiconductors

Multilayer sensor structure based on porous silicon

V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, K. E. Ivlev

Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences, 644024 Omsk, Russia

Abstract: The work is devoted to the creation of a sensor structure based on a porous silicon membrane. The structure under study integrates a porous layer used as a gas transport layer and a gas sensitive layer of non-stoichiometric tin oxide. The paper investigates the morphology of the structure and shows the gas permeability of the membrane on porous silicon. The gas sensitivity of the test structure obtained by passing a gas-air mixture containing NO$_2$ has been studied.

Keywords: porous silicon, membrane, non-stoichiometric tin oxide, thin films, resistive gas sensor.

Received: 24.02.2022
Revised: 02.03.2022
Accepted: 02.03.2022

DOI: 10.21883/FTP.2022.06.52592.9819



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