A. D. Nedoshivina, I. V. Makartsev, S. V. Obolensky, “Model for multiparametric analysis of parameters short-channel transistors of HEMT type”, Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 7,Pages <nobr>618

XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Model for multiparametric analysis of parameters short-channel transistors of HEMT type

A. D. Nedoshivina^a, I. V. Makartsev^ab, S. V. Obolensky^ab

^a Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
^b NPP "Salyut", Nizhny Novgorod, Russia

Abstract: Based on a set of analytical and one-dimensional numerical models an approach to multi-parameter optimization of HEMT transistors for frequency range $\sim$100 GHz is proposed.

Keywords: HEMT transistor, the effect of the increase of the velocity, short-channel transistor, analytic model.

DOI: 10.21883/FTP.2022.07.52747.02