Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes

The influence of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes with near-surface polarization-induced $\delta$-doping has been studied. It is shown that annealing provides additional possibilities for controlling the effective barrier height of diodes, improving and fine-tuning their transport characteristics. Thermal annealing can be used to fabricate low-barrier diodes designed to operate at high temperatures.