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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2022 Volume 56, Issue 8, Pages 753–758 (Mi phts7096)

This article is cited in 2 papers

XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Effect of hydrogen implantation dose on the relaxation of electrophysical characteristics of silicon-on-insulator structures after exposure to X-rays

N. D. Abrosimovaa, P. A. Yuninb, M. N. Drozdovb, S. V. Obolenskiyc

a Sedakov Scientific Research Institute of Measurement Systems, 603951 Nizhny Novgorod, Russia
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod, 607680 Nizhny Novgorod, Russia
c National Research Lobachevsky State University of Nizhny Novgorod, 603600 Nizhny Novgorod, Russia

Abstract: Experimental studies of the relaxation of electrophysical parameters of SOI structures with different doses of hydrogen implantation after exposure to stationary X-ray radiation are presented. Investigation of high-frequency CV characteristics and pseudo-MOS transistors made it possible to obtain information about the accumulated charge, the density of surface states, mobility of carriers. The impurity composition and depth profile of hydrogen concentration were determined by the SIMS method. Structural perfection of the layers and interfaces was evaluated using the XRR and XRD methods. A different nature of the relaxation dependence and the recovery time of the electrophysical parameters for SOI structures with different doses of hydrogen implantation are recorded. The values of mobility and charge density are higher for the structure with a lower hydrogen implantation dose.

Keywords: ion implantation, silicon on insulator, radiation resistance, X-ray diffraction, pseudo-MOS transistor, residual hydrogen, SIMS.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.08.53140.26



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