Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping

Computational and experimental studies of the characteristics of a high-power AlGaAs/InGaAs/GaAs D$p$HEMT were performed. A self-consistent numerical solution of the Schrödinger and Poisson equations was used to calculate the band diagram and the electron concentration in the channel of the transistor under study. The electron mobility in the transistor channel was estimated experimentally at 9300 cm$^2$/V $\cdot$ s. The obtained transfer current–voltage characteristic of the transistor was used to calculate the parameters of a model differential amplifier (small-signal gain and third-order non-linear distortion factor).