Silicon light-emitting diodes with dislocation-related luminescence fabricated with participation of oxygen precipitates

Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O$^+$ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than $<$ 150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3$\cdot$10$^{-20}$ cm$^2$ $\cdot$ s at room temperature.