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Fizika i Tekhnika Poluprovodnikov, 2022 Volume 56, Issue 9, Pages 922–927 (Mi phts7126)

Semiconductor physics

Internal loss in diode lasers with quantum well-dots

A. E. Zhukova, A. M. Nadtochiya, N. V. Kryzhanovskayaa, Yu. M. Shernyakovb, N. Yu. Gordeevb, A. A. Serinb, S. A. Mintairovb, N. A. Kalyuzhnyyb, A. S. Payusovb, G. O. Kornyshovc, M. V. Maksimovc, Y. Wangd

a National Research University "Higher School of Economics", St. Petersburg Branch, 190008 St. Petersburg, Russia
b Ioffe Institute, 194021 St. Petersburg, Russia
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
d Laser Institute, Shandong Academy of Sciences, 266100 Qingdao, P.R. China

Abstract: The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determine the free-carrier absorption in the active region and in the waveguiding layer. The optimal design of the laser diode was determined to achieve the highest external differential efficiency.

Keywords: diode lasers, semiconductor nanostructures, internal loss.

Received: 04.05.2022
Revised: 01.07.2022
Accepted: 08.07.2022

DOI: 10.21883/FTP.2022.09.53416.9878


 English version:
Semiconductors, 2023, 57:11, 513–518

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© Steklov Math. Inst. of RAS, 2025