A. M. Nadtochiy, I. A. Melnichenko, K. A. Ivanov, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, N. V. Kryzhanovskaya, A. E. Zhukov, “Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots”, Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 10,Pages <nobr>993

Semiconductor structures, low-dimensional systems, quantum phenomena

Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots

A. M. Nadtochiy^a, I. A. Melnichenko^a, K. A. Ivanov^a, S. A. Mintairov^b, N. A. Kalyuzhnyy^b, M. V. Maksimov^c, N. V. Kryzhanovskaya^a, A. E. Zhukov^a

^a National Research University "Higher School of Economics", St. Petersburg Branch, 190008 St. Petersburg, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia
^c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10–300 K using photoluminescence spectroscopy in CW mode as well with time resolution. Obtained decay times were splitted into radiative and nonradiative components of carrier lifetime. It is found that radiative lifetime demonstrates exponential growth with temperature rise, while temperature dependence of nonradiative one is much weaker.

Keywords: semiconductors, quantum well-dots, photoluminescence, time resolution, lifetime, temperature dependence.

Received: 20.09.2022
Revised: 26.09.2022
Accepted: 26.09.2022

DOI: 10.21883/FTP.2022.10.53961.9963