A. V. Babichev, E. V. Pirogov, M. S. Sobolev, D. V. Denisov, N. A. Fominykh, A. I. Baranov, A. S. Gudovskikh, I. A. Melnichenko, P. A. Yunin, V. N. Nevedomskiy, M. V. Tokarev, B. Ya. Ber, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Study of active regions based on multiperiod GaAsN/InAs superlattice”, Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 10,Pages <nobr>1002

Semiconductor physics

Study of active regions based on multiperiod GaAsN/InAs superlattice

A. V. Babichev^a, E. V. Pirogov^b, M. S. Sobolev^b, D. V. Denisov^b, N. A. Fominykh^bc, A. I. Baranov^b, A. S. Gudovskikh^b, I. A. Melnichenko^bc, P. A. Yunin^d, V. N. Nevedomskiy^e, M. V. Tokarev^e, B. Ya. Ber^e, A. G. Gladyshev^a, L. Ya. Karachinsky^a, I. I. Novikov^a, A. Yu. Egorov^b

^a ITMO University, 197101 St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
^c National Research University "Higher School of Economics", St. Petersburg Branch, 190008 St. Petersburg, Russia
^d Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
^e Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about $\sim$90 meV.

Keywords: superlattices, molecular beam epitaxy, gallium arsenide, dilute nitride, GaAsN, InAs.

Received: 23.08.2022
Revised: 26.09.2022
Accepted: 26.09.2022

DOI: 10.21883/FTP.2022.10.53963.9951