Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype

An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homoepitaxy. Heteroepitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3C-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline “seed” that determines cubic polytype of the overgrown SiC layer.