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Fizika i Tekhnika Poluprovodnikov, 2022 Volume 56, Issue 12, Pages 1148–1153 (Mi phts7161)

Semiconductor physics

Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

A. S. Payusova, A. A. Bekmana, G. O. Kornyshovb, Yu. M. Shernyakova, M. V. Maksimovb, N. Yu. Gordeeva

a Ioffe Institute, 194021 St. Petersburg, Russia
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: An improved technique for thermal resistance measurement of edge-emitting diode lasers using spontaneous emission spectra, collected through the opening in the $n$-contact within the range of operating currents, has been proposed. The advantage of the proposed technique is that systematic errors typical for measurements based on lasing spectra are excluded. The accuracy of the method was verified by measuring the dependence of the thermal resistance on the cavity length for diode lasers with 100 $\mu$m strip width. Obtained results are in good agreement with the model, and the minimum measurement error was $\pm$0.1 K/W. The proposed technique can be used in metrological support of fabrication process of semiconductor lasers.

Keywords: laser diode, thermal resistance, spontaneous emission.

Received: 02.12.2022
Revised: 08.12.2022
Accepted: 08.12.2022

DOI: 10.21883/FTP.2022.12.54515.4409



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