The investigation of the impact of nano-structured AlN/Si(100) templates for the growth of semipolar AlN$(10\bar11)$ layers

Semipolar AlN$(10\bar11)$ layers grown by hydride vapour-phase epitaxy (HVPE) on AlN/Si(100) templates were studied by X-ray diffraction, atomic force, and scanning electron microscopy. Two types of structures were prepared as AlN/Si(100) templates on a Si(100) substrate with a symmetrical V-shaped nano-relief with a depth of about 40 nm at a step of 40–60 nm, in which one of the templates had only a layer grown by metal organic chemical vapor phase deposition (MOCVD), and the second also had an additional intermediate layer a layer grown by reactive magnetron sputtering (RMS). It was shown that all structures formed the HVPE layer of AlN in the form of blocks, the sizes of which were larger for the template grown by MOCVD than on the template grown by two methods. It was found that the templates affect the structure of the AlN layer: on a template grown by two methods, with a thickness of 115 microns separated from the substrate, X-ray diffraction showed the presence of (0002) and $(10\bar11)$ blocks with FWHM $\omega_\theta$ = 5 arcgrad, and on the MOCVD template, the structure of AlN$(10\bar11)$ with $\omega_\theta$ = 1.5 arcgrad with cracks in the direction perpendicular to the V-groove at a thickness of 7 microns.