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Fizika i Tekhnika Poluprovodnikov, 2025 Volume 59, Issue 1, Pages 37–42 (Mi phts7169)

Semiconductor physics

Bridge-contact microdisk lasers formed by wet chemical etching

A. A. Obraztsovaa, A. A. Pivovarovab, S. D. Komarova, I. S. Fedosova, K. A. Ivanova, N. A. Kalyuzhnyyb, S. A. Mintairovb, N. D. Il'inskayab, Yu. P. Yakovlevb, I. S. Makhova, N. V. Kryzhanovskayaa, A. E. Zhukova

a National Research University "Higher School of Economics", St. Petersburg Branch
b Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: Presents an approach to create quantum dot microlasers on GaAs substrates with a disk cavity, a bridge-type electrical contact and a supporting mesa formed by wet chemical etching. The bridge structure consists of two mesa structures connected by a suspended gold beam, one of which is actually a microdisk cavity, and the other allows to create an external electrical contact. The proposed method opens up ways to fabricate small-diameter injection microlasers, since it eliminates the need to attach an electrical wire to the upper surface of the microlaser cavity. Microlasers with a bridge electrical contact were fabricated, the formation of a close-to-vertical microcavity side-wall in the active region of the structure was demonstrated and the electroluminescence spectra of the microlasers were obtained in a wide range of pump currents, confirming the possibility of lasing both at room and elevated temperatures.

Received: 03.02.2025
Revised: 10.04.2025
Accepted: 17.04.2025

DOI: 10.61011/FTP.2025.01.60498.7587



© Steklov Math. Inst. of RAS, 2025