D. A. Pavlov, N. V. Baidus, A. I. Bobrov, O. V. Vikhrova, E. I. Volkova, B. N. Zvonkov, N. V. Malekhonova, D. S. Sorokin, “Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1,Pages <nobr>3

This article is cited in 2 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

D. A. Pavlov^a, N. V. Baidus^b, A. I. Bobrov^a, O. V. Vikhrova^b, E. I. Volkova^a, B. N. Zvonkov^b, N. V. Malekhonova^a, D. S. Sorokin^a

^a Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs$_x$ P$_{1-x}$ layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

Received: 23.05.2014
Accepted: 15.06.2014