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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 1, Pages 6–10 (Mi phts7174)

This article is cited in 6 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Optical lattices of excitons in InGaN/GaN quantum well systems

V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, M. A. Yagovkina

Ioffe Institute, St. Petersburg

Abstract: ptical lattices of excitons in periodic systems of InGaN quantum wells with GaN barriers are designed, implemented, and investigated. Due to the collective interaction of quasi-two-dimensional excitons with light and a fairly high binding energy of excitons in GaN, optical Bragg reflection at room temperature is significantly enhanced. To increase the resonance optical response of the system, new structures with two quantum wells in a periodic supercell are designed and implemented. Resonance reflection of 40% at room temperatures for structures with 60 periods is demonstrated.

Received: 23.05.2014
Accepted: 15.06.2014


 English version:
Semiconductors, 2015, 49:1, 4–8

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