V. Ya. Aleshkin, S. V. Morozov, V. V. Rumyantsev, I. V. Tuzov, “Observation of dynamics of impurity photoconductivity in <nobr>$n$</nobr>-GaAs caused by electron cooling”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1,Pages <nobr>117

This article is cited in 3 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Observation of dynamics of impurity photoconductivity in $n$-GaAs caused by electron cooling

V. Ya. Aleshkin^ab, S. V. Morozov^ab, V. V. Rumyantsev^ab, I. V. Tuzov^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: Experimental investigation of the time dependence of impurity photoconductivity in $n$-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.

Received: 23.05.2014
Accepted: 15.06.2014