P. E. Teterin, D. V. Averyanov, Yu. G. Sadofyev, O. E. Parfenov, I. A. Likhachev, V. G. Storchak, “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1,Pages <nobr>134

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XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

P. E. Teterin^a, D. V. Averyanov^ab, Yu. G. Sadofyev^ac, O. E. Parfenov^a, I. A. Likhachev^a, V. G. Storchak^a

^a National Research Centre "Kurchatov Institute", Moscow
^b National Engineering Physics Institute "MEPhI", Moscow
^c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Epitaxial EuO thin films with thickness up to 60 nm have been grown by molecular beam epitaxy both on SrO sublayers and directly on Si (001) substrates. Crystal structure has been controlled in situ by reflection high energy electron diffraction. Ex situ studies by X-ray diffraction and Rutherford backscattering have confirmed high crystalline quality of the films.

Received: 23.05.2014
Accepted: 15.06.2014