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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 1, Pages 138–141 (Mi phts7199)

This article is cited in 2 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Characteristics of fullerene-based diode structures on polymer and glass substrates

V. V. Travkina, G. L. Pakhomovab, M. N. Drozdovab, S. A. Koroleva, A. I. Mashinb, A. A. Logunovb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod

Abstract: Chemical structure of the top Al/C60 interface in Al/Ñ$_{60}$/ITO sandwich structures (Al is the thermally deposited top aluminum layer, Ñ$_{60}$ is the thermally deposited fullerene layer, ITO is the double indiumtin oxide, the role of the substrate is played by Lavsan (polyethylene terephthalate), or glass) is studied by time-of-flight secondary mass spectrometry (ToF-SIMS) with depth profiling. The study is stimulated by the recently found specific features of the photovoltaic effect in fullerene-containing sandwich structures on glass or polymer substrates. It is found that the chemical composition of the top Al/Ñ$_{60}$ interface is not the same on different substrates. This leads to differences in the photovoltaic conversion parameters for more complex thin-film structures with a molecular heterojunction.

Received: 23.05.2014
Accepted: 15.06.2014


 English version:
Semiconductors, 2015, 49:1, 134–137

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