N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si <nobr>$\delta$</nobr> layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2,Pages <nobr>145

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

N. S. Volkova^a, A. P. Gorshkov^a, S. V. Tikhov^a, N. V. Baidus^b, S. V. Khazanova^a, V. E. Degtyarov^a, D. O. Filatov^b

^a Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si $\delta$ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the $\delta$ layer with respect to the quantum well on the optoelectronic properties of the structures is established.

Received: 23.05.2014
Accepted: 15.06.2014