V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, K. E. Kudryavtsev, S. M. Nekorkin, “An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2,Pages <nobr>175

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

V. Ya. Aleshkin^ab, N. V. Dikareva^c, A. A. Dubinov^ab, B. N. Zvonkov^c, K. E. Kudryavtsev^ab, S. M. Nekorkin^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

Received: 23.05.2014
Accepted: 16.06.2014