Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, “Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in <nobr>$n$</nobr>-InGaAs/GaAs nanostructures with double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2,Pages <nobr>186

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XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in $n$-InGaAs/GaAs nanostructures with double quantum wells

Yu. G. Arapov^a, S. V. Gudina^a, A. S. Klepikova^a, V. N. Neverov^a, N. G. Shelushinina^a, M. V. Yakunin^ab

^a Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg

Abstract: The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in $n$-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields $B$ = 0–16 T and temperatures $T$ = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.

Received: 23.05.2014
Accepted: 16.06.2014