D. V. Kozlov, S. V. Morozov, V. V. Rumyantsev, I. V. Tuzov, K. E. Kudryavtsev, V. I. Gavrilenko, “Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in <nobr>$p$</nobr>-Si:B”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2,Pages <nobr>192

This article is cited in 4 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in $p$-Si:B

D. V. Kozlov^ab, S. V. Morozov^ab, V. V. Rumyantsev^ab, I. V. Tuzov^ab, K. E. Kudryavtsev^a, V. I. Gavrilenko^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: A theoretical model developed for interpretation of the results of measurements of the impurity-photoconductivity relaxation in $p$-Si:B under pulsed optical excitation by a narrow-band tunable source of radiation in “heating” (10–500 V/cm) electric fields is presented. The model takes into account the capture of holes at the ground and lower excited states of boron with optical-phonon emission. It is shown that the dependence of the photoconductivity-relaxation time on the electric-field intensity can be unsteady taking into account these processes.

Received: 23.05.2014
Accepted: 16.06.2014