Exchange enhancement of the electron $g$ factor in strained InGaAs/InP heterostructures

The exchange enhancement of the electron $g$ factor in strained InGaAs/InP heterostructures with a two-dimensional electron gas is studied. Analysis of the temperature dependence of the resistance in the minima of the Shubnikov-de Haas oscillations in perpendicular magnetic fields up to 12 T in the vicinity of the odd filling factors of the Landau levels yields the values of the effective electron Lande factor $g^*$ from -8.6 to -10.1. The experimental values are compared with the results of theoretical calculations of the g factor of quasiparticles. The calculations are performed using an eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian and take into account exchange interaction in the two-dimensional electron gas. It is shown that, under the conditions of a large overlap between the spin-split Landau levels, the maximum value of the quasiparticle $g$ factor can be attained in the vicinity of even filling factors. This is caused by the nonparabolicity of the electron dispersion relation.