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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 3, Pages 289–293 (Mi phts7225)

This article is cited in 4 papers

Electronic properties of semiconductors

First principles calculations of structure parameters and transition pressures of GaN$_{1-x}$Bi$_x$ alloys

R. Alayaa, M. Mbarkib, A. Rebeya

a University of Monastir-Unité de Recherche sur les Hétéro-Epitaxies et Applications. Faculté des Sciences de Monastir 5019, Tunisia
b University of Gabés-Laboratoire de Physique des matériaux et nanomatériaux appliquée á l’environnement. Faculté des Sciences de Gabés 6072, Tunisia

Abstract: In this work, we have studied the structural properties of GaN$_{1-x}$Bi$_x$ ternary alloys using the pseudopotentiel method. We have calculated properties of these alloys in zinc blende, rocksalt and wurtzite structures at atmospheric and under hydrostatic pressure. The calculated lattice parameters increase by increasing bismuth composition, while a little deviation from Vegard's law is observed. We have shown that for $x$ = 0 and 0.25, the wurtzite phase is the most stable, whereas for Bi concentration 0.375, 0.5, 0.75 and 1 the zinc blende phase is the most stable one. We have calculated for each case the transition pressure and we have found that our calculated values were in good agreement with those in the literature.

Received: 01.04.2014
Accepted: 14.04.2014

Language: English


 English version:
Semiconductors, 2015, 49:3, 279–284

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