S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, D. E. Spirin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, A. V. Ershov, A. I. Mashin, È. P. Domashevskaya, “Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3,Pages 421

This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data

S. Yu. Turishchev^a, V. A. Terekhov^a, D. A. Koyuda^a, D. E. Spirin^a, E. V. Parinova^a, D. N. Nesterov^a, D. A. Grachev^b, I. A. Karabanova^b, A. V. Ershov^b, A. I. Mashin^b, È. P. Domashevskaya^a

^a Voronezh State University
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures annealed at temperatures of 500–1100$^\circ$C are reported. The data show that, upon high-temperature annealing ($\sim$ 1100$^\circ$C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4–1.52 eV.

Received: 22.04.2014
Accepted: 12.05.2014