T. S. Shamirzaev, N. G. Galkin, E. A. Chusovitin, D. L. Goroshko, A. V. Shevlyagin, A. K. Gutakovskii, A. A. Saranin, A. V. Latyshev, “Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 4,Pages 519

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Semiconductor physics

Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures

T. S. Shamirzaev^ab, N. G. Galkin^cd, E. A. Chusovitin^c, D. L. Goroshko^c, A. V. Shevlyagin^c, A. K. Gutakovskii^ae, A. A. Saranin^dc, A. V. Latyshev^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^c Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
^d Far Eastern Federal University, Vladivostok
^e Novosibirsk State University

Abstract: The electroluminescence efficiency of silicon light-emitting diode structures with several layers of $\beta$-FeSi$_2$ nanocrystallites embedded in the $p$–$n$ junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied.

Received: 04.08.2014
Accepted: 25.08.2014