RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 5, Pages 584–587 (Mi phts7277)

This article is cited in 3 papers

Electronic properties of semiconductors

Effect of spin-orbit interaction on the electronic structure of indium-antimonide $d$ bands

V. V. Sobolev, D. A. Perevoshchikov

Udmurt State University, Izhevsk

Abstract: The bands and densities of states of d bands in indium antimonide (InSb) are determined taking into account and disregarding the spin-orbit interaction. It is established that taking into account the effect of spin-orbit interaction results also in a substantial change in the dispersion of the obtained bands instead of only in the doublet splitting of the band of core d levels at $\sim$ (0.79–0.86) eV. It is established that it is indium 4$d$ states with $e_g$ and $t_{2g}$ symmetry that give the main contribution to the density of states. The calculations are carried out by the LAPW method with the exchange-correlation potential in the generalized gradient approximation (LAPW + GGA).

Received: 16.04.2014
Accepted: 29.09.2014


 English version:
Semiconductors, 2015, 49:5, 570–573

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025