GaInP semiconductor compounds doped with the Sb isovalent impurity

GaInP$_{1-x}$Sb$_x$ layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP$_{1-x}$Sb$_x$ layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP$_{1-x}$Sb$_x$ layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP$_{1-x}$Sb$_x$ are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.