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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 5, Pages 596–598 (Mi phts7280)

This article is cited in 5 papers

Electronic properties of semiconductors

Temperature dependence of the band gap of Cu$_2$ZnSnS$_4$ single crystals

I. V. Bondar'

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: The transmittance spectra of Cu$_2$ZnSnS$_4$ single crystals grown by the technique of chemical gastransport reactions are studied in the region of the fundamental absorption edge in the temperature range $T$ = 20 to 300 K. From the experimental spectra, the band gap of the compound is determined and the temperature dependence of the band gap is established. It is found that the band gap increases, as temperature is increased. It is shown that the temperature dependence is adequately described by the corresponding theoretical expression.

Received: 30.09.2014
Accepted: 20.10.2014


 English version:
Semiconductors, 2015, 49:5, 582–585

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