Photoelectric properties of $n$-ITO/$p$-GaTe heterojunctions

The photoelectric properties of $n$-ITO/$p$-GaTe anisotypic heterojunctions fabricated by the spraying of an InCl$_3$ alcohol solution onto heated GaTe substrates are studied. The results of studying the temperature dependences of the fabricated heterojunctions made it possible to determine the mechanisms of current passage through the barrier. Energy-band diagrams of the heterojunction are constructed. It is established that the $n$-ITO/$p$-GaTe heterojunction possesses photosensitivity in the range 0.35–0.73 $\mu$m.