Simulation of radiation-defect formation processes in heterostructures with self-assembled Ge(Si)/Si(001) nanoislands under neutron irradiation

TRISQD software is developed for the computer simulation of processes in which radiation defects are formed under the corpuscular irradiation of semiconductor heterostructures with lenticular nanoinclusions of various shapes. The computer program is used to study defect-formation processes in $p$–$i$–$n$ diodes with the $i$ region having a built-in 20-period lattice of self-assembled Ge(Si) nanoislands formed under irradiation with high-energy neutrons. It is found that the fraction of Ge(Si) nanoislands in which point radiation defects are formed under the impact of atomic-displacement cascades is $\le$ 3% of their total number in the lattice. More than 94% of the defects are localized in the bulk of the $p$, $n$, and $i$ regions of the diode and in silicon layers that separate sheets of Ge(Si) nanoislands.