Features of the uniaxial elastic deformation of X-ray-irradiated $p$-Si crystals

Changes in the conductivity of $p$-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.