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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 5, Pages 688–692 (Mi phts7297)

This article is cited in 9 papers

Semiconductor physics

Thermal resistance of ultra-small-diameter disk microlasers

A. E. Zhukovabc, N. V. Kryzhanovskayaac, M. V. Maksimovacd, A. A. Lipovskiiac, A. V. Savel'evabc, I. I. Shostaka, È. I. Moiseeva, Yu. V. Kudashovaa, M. M. Kulaginad, S. I. Troshkovd

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Saint Petersburg Physics and Technology Centre for Research and Education
c Peter the Great St. Petersburg Polytechnic University
d Ioffe Institute, St. Petersburg

Abstract: The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 $\mu$m and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 $\times$ 10$^{-3}$ (K $\cdot$ cm$^2$)/W, and the thermal resistance is 120–20$^\circ$C/mW.

Received: 06.11.2014
Accepted: 12.11.2014


 English version:
Semiconductors, 2015, 49:5, 674–678

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