R. V. Levin, A. E. Marichev, M. Z. Shvarts, E. P. Marukhina, V. P. Khvostikov, B. V. Pushnii, M. N. Mizerov, V. M. Andreev, “Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 5,Pages <nobr>715

This article is cited in 14 papers

Semiconductor physics

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures

R. V. Levin^ab, A. E. Marichev^ac, M. Z. Shvarts^a, E. P. Marukhina^a, V. P. Khvostikov^a, B. V. Pushnii^ab, M. N. Mizerov^b, V. M. Andreev^a

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg Electrotechnical University "LETI"

Abstract: Results obtained in the development of a metal-organic vapor-phase epitaxy (MOVPE) technology and in studies of the electrical parameters of photovoltaic converters based on heterostructures in the InP/InGaAsP system for the spectral range 0.95–1.2 $\mu$m are presented. A MOVPE technique is developed for obtaining and doping InGaAsP solid solutions around the spinodal dissociation region with a band-gap width of about 1.0 eV. Photovoltaic converters of 1000 concentrated sunlight are fabricated.

Received: 11.11.2014
Accepted: 17.11.2014