V. I. Orlov, O. V. Feklisova, E. B. Yakimov, “EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6,Pages <nobr>737

This article is cited in 3 papers

Proceedings of the Conference ''Silicon-2014'', Irkutsk, July 7-12, 2014
Surface, interfaces, thin films

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

V. I. Orlov^ab, O. V. Feklisova^a, E. B. Yakimov^ac

^a Institute of Microelectronics Technology and High-Purity Materials RAS
^b Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^c National University of Science and Technology «MISIS», Moscow

Abstract: The results of comparative experimental studies of one- and two-dimensional defects in plastically deformed silicon by the electron-beam-induced current (EBIC) and light-beam-induced current (LBIC) techniques are reported. It is shown that the contrast of two-dimensional defects (dislocation trails) in the LBIC method can by much more pronounced than that in the EBIC technique, which is in good agreement with the results of calculations. The higher sensitivity of the LBIC technique is mainly due to deeper penetration of the optical beam into the material in comparison to the penetration of the electron beam of a scanning electron microscope.

Received: 20.10.2014
Accepted: 05.11.2014