S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, “Recombination activity of interfaces in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6,Pages <nobr>741

This article is cited in 6 papers

Proceedings of the Conference ''Silicon-2014'', Irkutsk, July 7-12, 2014
Surface, interfaces, thin films

Recombination activity of interfaces in multicrystalline silicon

S. M. Peshcherova^a, E. B. Yakimov^b, A. I. Nepomnyashchikh^a, L. A. Pavlova^a, O. V. Feklisova^b

^a Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences
^b Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: The electrical activity of grain boundaries in multicrystalline silicon grown from metallurgical silicon by the Bridgman method is investigated by the method of electron-beam induced current. The main tendencies of atypical manifestation of the local electrical activity of $\Sigma3\{111\}$ and $\Sigma9\{110\}$ special boundaries are revealed. The structural features of the grain boundaries after selective etching and the impurity-distribution characteristics in multicrystalline silicon are determined by the methods of electron backscattering diffraction and electron-probe microanalysis.

Received: 27.10.2014
Accepted: 05.11.2014