Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya, V. A. Armbrister, V. A. Zinovyev, N. P. Stepina, A. F. Zinov'eva, A. V. Nenashev, A. K. Gutakovskii, “Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6,Pages <nobr>767

This article is cited in 24 papers

Proceedings of the Conference ''Silicon-2014'', Irkutsk, July 7-12, 2014
Manufacturing, processing, testing of materials and structures

Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

Zh. V. Smagina^a, A. V. Dvurechenskii^ab, V. A. Seleznev^a, P. A. Kuchinskaya^a, V. A. Armbrister^a, V. A. Zinovyev^a, N. P. Stepina^a, A. F. Zinov'eva^a, A. V. Nenashev^ab, A. K. Gutakovskii^ab

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge$^+$ ions is studied. The prepatterned surface presents a system of parallel 10-nm-wide grooves repeating with a period of 180 nm. Irradiation of the substrate was conducted at two temperatures, room temperature (cold irradiation) and 400$^\circ$C (hot irradiation). It is shown that, during epitaxy (550–700$^\circ$C), the residual radiation defects located in the bulk under the grooves suppress the nucleation of Ge nanoclusters in the grooves. In the case of prepatterned substrates, from which imperfect regions are completely removed, nanoclusters grow in the grooves.

Received: 06.11.2014
Accepted: 20.11.2014