On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

Using a quantitative model [6], the analysis of published data on the effect of the gate bias on the behavior of MOS structure subjected to ionizing radiation is performed. It is shown that, along with hydrogen-containing traps, there are hydrogen-free hole traps in samples with a low content of hydrogen; traps of both types are distributed inhomogeneously over the thickness of the gate insulator. In addition to ionized hydrogen, neutral hydrogen is involved in the formation of surface states and provides the main contribution to this process at negative gate bias. A decrease in the shift of the threshold voltage in the case of high fields is caused by an increase in the drift component of the hole drain to the electrodes.