E. D. Mishina, N. È. Sherstyuk, A. P. Shestakova, S. D. Lavrov, S. V. Semin, A. S. Sigov, A. Mitioglu, S. Anghel, L. Kulyuk, “Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 6,Pages <nobr>810

This article is cited in 9 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides

E. D. Mishina^a, N. È. Sherstyuk^a, A. P. Shestakova^a, S. D. Lavrov^a, S. V. Semin^ab, A. S. Sigov^a, A. Mitioglu^cd, S. Anghel^ce, L. Kulyuk^c

^a MIREA — Russian Technological University, Moscow
^b Radboud University Nijmegen, Institute for Molecules and Materials, 6500 Nijmegen, The Netherlands
^c Institute of Applied Physics, Academy of Sciences of Moldova, MD-2028 Chisinau, Republic of Moldova
^d Laboratoire National des Champs Magnétiques Intenses, 31400 Toulouse, France
^e Ruhr-Universitat Bochum, Anorganische Chemie III, D-44801 Bochum, Germany

Abstract: The results of studying the optical properties of nanoscale single crystals of MoS$_2$ : Cl$_2$ and WS$_2$ : Br$_2$ semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second-harmonic signal intensity. Unlike previously proposed interference mechanisms of edge effects, non-interference mechanisms are considered. The occurrence of edge effects is associated with either an increased Cl$_2$ and Br$_2$ halogen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.

Received: 16.12.2014
Accepted: 22.12.2014