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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 6, Pages 839–842 (Mi phts7323)

This article is cited in 10 papers

Semiconductor physics

On the tensosensitivity of a $p$$n$ junction under illumination

G. Gulyamova, A. G. Gulyamovab

a Namangan Engineering Pedagogical Institute
b Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: The effect of illumination on the tensosensitivity of a $p$$n$ junction is considered. It is shown that the tensosensitivity of an illuminated $p$$n$ junction can be controlled by a constant deformation $\varepsilon_0$, the frequency of illumination $\omega$, and its intensity $I_0$. It is established that the absorption coefficient near the critical points can vary greatly under the action of deformation and, hence, the tensosensitivity coefficient of the $p$$n$ junction can attain anomalously large values.

Received: 29.05.2014
Accepted: 04.09.2014


 English version:
Semiconductors, 2015, 49:6, 819–822

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