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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 6, Pages 843–846 (Mi phts7324)

This article is cited in 6 papers

Semiconductor physics

High-efficiency plasma treatment for surface modification of LPCVD ZnO

D. Andronikovab, A. Abramovab, E. Terukovabc, A. Vinogradovb, A. Ankudinovb, V. Afanasjevc

a R&D Center of Thin Film Technologies in Energetics under Ioffe Institute LLC, 194064 St. Petersburg, Russia
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI", 197376 St. Petersburg, Russia

Abstract: Plasma treatment of LPCVD Boron-doped ZnO aimed at surface modification of the films has been performed. We have shown that five minutes treatment with RF magnetron Ar plasma can be sufficient to transform surface morpholohy from as-deposited V-type to U-type, which better suits the growth and enhances the properties of post-deposited microcrystalline silicon as a material for PV modules. Effect of plasma treatment on optical and electrical properties and surface morpholohy has been studied. Comparative analysis of the acquired results has shown that short time treatment can provide required changes in curface morpholohy without significant deterioration of structure and electrical and optical properties of treated films, while long time treatment results in reduction of electronic properties most probably caused by excess defect formation at the surface of ZnO films. These results show that, despite promising outlooks, RF magnetron plasma treatment of ZnO for the production of PV modules requires careful optimization.

Received: 11.09.2014
Accepted: 23.09.2014

Language: English


 English version:
Semiconductors, 2015, 49:6, 823–826

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