D. V. Lavrukhin, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev, E. A. Klimov, R. A. Khabibullin, D. S. Ponomarev, P. P. Maltsev, “Investigation of the optical properties of GaAs with <nobr>$\delta$</nobr>-Si doping grown by molecular-beam epitaxy at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7,Pages <nobr>932

This article is cited in 17 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures

D. V. Lavrukhin^ab, A. E. Yachmenev^ab, A. S. Bugaev^ab, G. B. Galiev^a, E. A. Klimov^a, R. A. Khabibullin^ab, D. S. Ponomarev^ab, P. P. Maltsev^a

^a V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
^b Bauman Moscow State Technical University

Abstract: Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28–1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580$^\circ$C; these features are related to the formation of point defects and their complexes. The “pump–probe” light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to $\tau_c\approx$ 1.2–1.5 ps.

Received: 26.11.2014
Accepted: 15.12.2014