A. E. Zhukov, L. V. Asryan, E. S. Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, “On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7,Pages <nobr>956

This article is cited in 7 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

A. E. Zhukov^ab, L. V. Asryan^c, E. S. Semenova^d, F. I. Zubov^ab, N. V. Kryzhanovskaya^a, M. V. Maksimov^abe

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Peter the Great St. Petersburg Polytechnic University
^c Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA
^d DTU Fotonik, Technical University of Denmark, Kgs. Lyngby, DK-2800, Denmark
^e Ioffe Institute, St. Petersburg

Abstract: Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In$_{0.232}$Al$_{0.594}$Ga$_{0.174}$As/Al$_{0.355}$Ga$_{0.645}$As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

Received: 29.12.2014
Accepted: 30.12.2014