T. V. Bez'yazychnaya, M. V. Bogdanovich, V. V. Kabanov, D. M. Kabanov, E. V. Lebiadok, V. V. Parashchuk, A. G. Ryabtsev, G. I. Ryabtsev, P. V. Shpak, M. A. Shchemelev, I. A. Andreev, E. V. Kunitsyna, V. V. Sherstnev, Yu. P. Yakovlev, “Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7,Pages <nobr>1003

This article is cited in 7 papers

Semiconductor physics

Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

T. V. Bez'yazychnaya^a, M. V. Bogdanovich^a, V. V. Kabanov^a, D. M. Kabanov^a, E. V. Lebiadok^a, V. V. Parashchuk^a, A. G. Ryabtsev^a, G. I. Ryabtsev^a, P. V. Shpak^a, M. A. Shchemelev^a, I. A. Andreev^b, E. V. Kunitsyna^b, V. V. Sherstnev^b, Yu. P. Yakovlev^b

^a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b Ioffe Institute, St. Petersburg

Abstract: The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 $\mu$m, are investigated experimentally. It is shown that the temperature shift of the maximum emission wavelength of a light emitting diode in the temperature range 80–313 K is 1.8 nm/K. The temperature dependence of the band gap of the InAs$_{0.88}$Sb$_{0.12}$ active layer is described by the Varshni formula with the characteristic parameters: $E_{g0}$ = 0.326 eV, $\alpha$ = 2.917 $\times$ 10$^{-4}$ eV/K, and $\beta$ = 168.83 K. The results of our measurements of the concentrations of carbon dioxide (CO$_2$) using the studied light emitting diodes show the possibility of the reliable detection of CO$_2$ in the concentration range 300–100000 ppm.

Received: 18.12.2014
Accepted: 13.01.2015