N. I. Klyui, N. A. Semenenko, I. M. Khatsevich, A. V. Makarov, A. N. Kabaldin, F. V. Fomovskii, Wei Han, “Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 8,Pages <nobr>1056

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films

N. I. Klyui^a, N. A. Semenenko^a, I. M. Khatsevich^a, A. V. Makarov^a, A. N. Kabaldin^a, F. V. Fomovskii^b, Wei Han^c

^a Institute of Semiconductor Physics NAS, Kiev
^b Kremenchug National University
^c College of Physics, Jilin University, Changchun, 130012, P.R. China

Abstract: It is established that the deposition of a diamond-like film onto a structure with silicon nanoclusters in a silicon dioxide matrix yields an increase in the long-wavelength photoluminescence intensity of silicon nanoclusters due to the passivation of active-recombination centers with hydrogen and a shift of the photoluminescence peak to the region of higher photosensitivity of silicon-based solar cells. It is also shown that, due to the deposited diamond-like film, the resistance of such a structure to degradation upon exposure to $\gamma$ radiation is improved, which is also defined by the effect of the passivation of radiation-induced activerecombination centers by hydrogen that is released from the films during treatment.